FCP9N60N دیتاشیت

FCP9N60N

مشخصات دیتاشیت

نام دیتاشیت FCP9N60N
حجم فایل 84.871 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FCP9N60N

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

FCPF9N60N, FCPF9N60T 12 pages

FCP9N60N 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCP9N60N
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 83.3W
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 930pF@10V
  • Continuous Drain Current (Id): 19A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 2pF@10V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 330mΩ@10V,4.5A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: SuperMOS™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 83.3W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FCP9
  • detail: N-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3

محصولات مشابه